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158 and 50 s.c.c.m., respectively. The carrier gas was bubbled through liquid SiCl4 chilled to 0 0C in order to maintain a constant vapour pressure. The photolithography patterned SOI trench substrates were sensitized with a 10 aminopropyltriethoxysilane in ethanol solution and then coated with 80-nm-diameter gold nanoparticles Ted Pella by means of drop-casting. The nanowires were boron doped by annealing for 1 h at 675 0C with 500 s.c.c.m. carrier gas and 0.5.s.c.c.m. 1 BC Ar, followed by 15...
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